发明名称 LASER CRYSTALLIZATION METHOD, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, METHOD OF MANUFACTURING LIQUID CRYSTAL DISPLAY DEVICE, AND METHOD OF MANUFACTURING ELECTROLUMINESCENCE DISPLAY DEVICE
摘要 <p>PROBLEM TO BE SOLVED: To carry out laser crystallization, conforming to the forming position of a TFT so as to improve the channel region of the TFT in crystallinity and the TFT in performance. SOLUTION: A manufacturing method comprises a first process of forming a metal film pattern 12 on a substrate 11 and sequentially forming an insulating film 13 and a semiconductor film (non-single crystal film) 14 on the substrate 11 so as to cover the metal film pattern 12, a second process of irradiating a prescribed spot on the semiconductor film 14 with a laser beam 21 having an irradiation region formed into a prescribed shape to crystallize the irradiated region as the metal film pattern 12 is used as an alignment mark, and a third process of irradiating a spot slightly off the above spot with a laser beam 22 having an irradiation region formed into a prescribed shape so as to make its irradiated region overlap partially with the former region irradiated with the laser beam 21 and to crystallize the irradiated region.</p>
申请公布号 JP2003124116(A) 申请公布日期 2003.04.25
申请号 JP20010317625 申请日期 2001.10.16
申请人 SONY CORP 发明人 HAYASHI HISAO
分类号 G02F1/13;G02F1/1368;H01L21/20;H01L21/336;H01L29/786;H01S3/00;(IPC1-7):H01L21/20;G02F1/136 主分类号 G02F1/13
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