发明名称 |
LASER CRYSTALLIZATION METHOD, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, METHOD OF MANUFACTURING LIQUID CRYSTAL DISPLAY DEVICE, AND METHOD OF MANUFACTURING ELECTROLUMINESCENCE DISPLAY DEVICE |
摘要 |
<p>PROBLEM TO BE SOLVED: To carry out laser crystallization, conforming to the forming position of a TFT so as to improve the channel region of the TFT in crystallinity and the TFT in performance. SOLUTION: A manufacturing method comprises a first process of forming a metal film pattern 12 on a substrate 11 and sequentially forming an insulating film 13 and a semiconductor film (non-single crystal film) 14 on the substrate 11 so as to cover the metal film pattern 12, a second process of irradiating a prescribed spot on the semiconductor film 14 with a laser beam 21 having an irradiation region formed into a prescribed shape to crystallize the irradiated region as the metal film pattern 12 is used as an alignment mark, and a third process of irradiating a spot slightly off the above spot with a laser beam 22 having an irradiation region formed into a prescribed shape so as to make its irradiated region overlap partially with the former region irradiated with the laser beam 21 and to crystallize the irradiated region.</p> |
申请公布号 |
JP2003124116(A) |
申请公布日期 |
2003.04.25 |
申请号 |
JP20010317625 |
申请日期 |
2001.10.16 |
申请人 |
SONY CORP |
发明人 |
HAYASHI HISAO |
分类号 |
G02F1/13;G02F1/1368;H01L21/20;H01L21/336;H01L29/786;H01S3/00;(IPC1-7):H01L21/20;G02F1/136 |
主分类号 |
G02F1/13 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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