发明名称 SUBSTRATE FOR SEMICONDUCTOR STRUCTURE HAVING HIGH THERMAL CONDUCTIVITY
摘要 <p>PROBLEM TO BE SOLVED: To obtain a substrate having a high thermal conductivity and a structural integrality with a thick board, related to a semiconductor device. SOLUTION: The substrate 100 includes a body 11 having an upper surface 114 and a bottom surface 112 opposite to the upper surface 114 and having the first thermal conductivity, a cavity 116 defined by an inner surface 113 of the body 110 and opened at least on the bottom surface 112, and at least one material 120 disposed in the cavity 116 having the second thermal conductivity higher than the first thermal conductivity and coming into contact with at least a part of the inner surface 113.</p>
申请公布号 JP2003124407(A) 申请公布日期 2003.04.25
申请号 JP20020288232 申请日期 2002.10.01
申请人 XEROX CORP 发明人 ROMANO LINDA T;KNEISSL MICHAEL A;NORTHRUP JOHN E
分类号 H01L23/36;H01L23/367;H01L27/15;H01L29/06;H01L33/64;H01S5/02;H01S5/024;(IPC1-7):H01L23/36 主分类号 H01L23/36
代理机构 代理人
主权项
地址