| 摘要 |
PROBLEM TO BE SOLVED: To provide a method in which the adhesion of the re-wiring metal surface of a semiconductor package and a sealing resin layer is improved and the defect of the semiconductor package can be reduced. SOLUTION: In the manufacturing method for the semiconductor package, the package has an insulating layer 3 formed on a wafer 1 provided with an electrode 2, a re-wiring layer 4 connected to an electrode on this insulating layer through an opening 3a formed in the area matched to the electrode, and a sealing resin layer 5 for sealing the wafer, the insulating layer and the re-wiring layer. The re-wiring layer 4 is formed by a first plating process for forming one part of the re-wiring layer with optimal current density, in which flatness is secured on the surface of an electrodeposition layer and the variation in the thickness of the electrodeposition layer is reduced over all the surface of the wafer; and a second plating process for forming the re-wiring layer having a rugged surface by plating for a time shorter than the first plating process with the current density of >=5-times optimal current density and <=20-times optimal current density continuously to the first plating process.
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