| 摘要 |
PROBLEM TO BE SOLVED: To solve the problem in a nitride semiconductor element employing an n-type nitride semiconductor or a nitride semiconductor containing n-type impurities as the active layer of quantum well structure that further enhancement is required in the characteristics of the active layer, and the problem that further enhancement is required in the lifetime and the electrostatic breakdown voltage characteristics of the nitride semiconductor element. SOLUTION: An active layer 12 sandwiched by a p-type nitride semiconductor layer 11 and an n-type nitride semiconductor layer 13 comprises a barrier layer 2a containing n-impurities, a well layer 1a of nitride semiconductor containing In, and a barrier layer 2c containing p-impurities or an undoped barrier layer 2c wherein carriers can be injected suitably into the active layer 12 by locating the barrier layer 2 as a barrier layer closest to the p-layer side. |
