发明名称 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To provide the manufacturing method of a semiconductor device for inspecting an opening with high reliability even if a step does not exist on the base of a via hole and the diameter of the via hole becomes small. SOLUTION: A wire constituted of a conductive material is buried on a wiring groove disposed in a surface formed of an insulating material in a substrate where a first surface is delimited. The upper face of the wire is exposed to the first surface and the wire is electrically connected to the conductive member. The conductive material occupies a region larger than that of the wire when viewed by eyes parallel to the normal line of the first substrate. A first film constituted of the insulating material is formed on the first surface. The via hole is formed on the first film. A boundary between the wire and the surface constituted of the insulating material passes through the via hole when viewed by the eyes parallel to the normal line of the first surface. The base of the via hole is observed by a device obtaining picture information by using the intensity distribution of secondary electrons and reflected electrons from a sample, and the quantity of the state of the base of the via hole is determined.
申请公布号 JP2003124277(A) 申请公布日期 2003.04.25
申请号 JP20010313706 申请日期 2001.10.11
申请人 FUJITSU LTD 发明人 WATANABE KENICHI
分类号 H01L21/66;H01L21/3205;H01L21/768;H01L23/52;H01L23/522;(IPC1-7):H01L21/66;H01L21/320 主分类号 H01L21/66
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