REMOVING AGENT COMPOSITION

摘要

PROBLEM TO BE SOLVED: To provide a removing agent composition which hardly corrodes a silicon part even when a photoresist or a residual material depositing on the surface of a semiconductor device where both of the silicon part and a metal oxide film are exposed on the surface is to be removed. SOLUTION: The removing agent composition is characterized in containing an inorganic acid and/or its salt and a fluoroalkylacrylate copolymer. A method for removing a photoresist is presented featuring that the above removing agent composition is used to remove a photoresist. A method for removing a residual material of a semiconductor device is also presented featuring that the above removing agent composition is used to remove the residual material produced in the treatment of a semiconductor.