| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which can improve element characteristics. SOLUTION: The semiconductor device is provided with a substrate 21 having a projecting semiconductor element region 23 and a gate electrode 26 which is formed on the upper and lateral side of the element region 23 with gate insulating films 25a and 25b interlaid. In the element region 23, a source region and a drain region are provided separately from each other so that a channel region is formed opposite to the gate electrode 26. At least one selected from the group consisting of the film thickness of the gate insulating films 25a and 25b, the material of the gate insulating films and the material of the gate electrode is different between the upper side of the element region 23 and the lateral side thereof.
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