| 摘要 |
PROBLEM TO BE SOLVED: To obtain a method of working laminated film by which a laminated film can be worked by reducing the damage to an objective film by an ion beam by etching the objective film by accurately visually confirming the boundary of the film, and to provide a tunnel magnetoresistive effect element manufactured by the method. SOLUTION: An end-point detecting film is provided under a tunnel magnetoresistive effect film so that the film may come into contact with the lower surface of the effect film and a start-point detecting film is provided on the upper surface of the effect film. While the ground current flowing to connecting wiring 33 which connects the effect film to a ground potential is measured by means of an ammeter 34, a resist on the start-point detecting film is machined by projecting an ion beam 35 upon the resist from the top side. The end point of the machining operation performed on the resist is detected from the change of the ground current which occurs when the machining operation approaches the start-point detecting film. While the ground current is measured, in addition, the tunnel magnetoresistive effect film is machined by projecting a low-accelerating voltage ion beam 35 upon the film from the top side. The end point of the machining operation performed on the effect element is detected from the change of the ground current which occurs when the machining operation approaches the end-point detecting film.
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