OXIDE DIELECTRIC FILM FORMING METHOD AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To provide a method of forming an oxide dielectric film having superior adhesion and few interface defects on a metal film. SOLUTION: The method of forming an oxide dielectric film on a metal film of an element of platinum group by a chemical deposition method comprises a step S15 of depositing a first oxide dielectric film on a first condition having first oxidating power on the metal film and a step S16 of depositing a second oxide dielectric film on a second condition having second oxidating power higher than the first oxidating power on the first oxide dielectric film, thereby forming the oxide dielectric films. This suppresses the oxidation of a base film, raises the adhesion of the oxide dielectric film to the base film and checks the interface defect.