| 摘要 |
PROBLEM TO BE SOLVED: To realize a semiconductor device capable of effectively sucking holes stored in a channel region without generating a leakage current by suppressing a substrate floating effect. SOLUTION: The method for manufacturing the semiconductor device comprises the steps of forming second semiconductor regions 217, 227 having smaller forbidden band width than that of a first semiconductor for constituting a channel 203 at least partly or entirely of a source region 216 or a drain region 226, and selecting the position, the structure, the type and the like of each of the second semiconductor regions and the types or the like of impurities to be doped in the second semiconductor region, thereby suppressing the occurrence of a crystal defect due to the hetero junction of the first and second semiconductors. The structure of the semiconductor device in which even when the defect occurs, its effect does not bring about a leakage current for deteriorating the transistor characteristics or the holding characteristics of a memory and the method for manufacturing the device for realizing these structures are provided. |
