| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which hardly loses data due to a pass gate leak, even if used as a transfer gate in a memory. SOLUTION: Partial depletion type transistors formed on a silicon layer 32 are used in a circuit of a memory. The transistor allows the potential on the body region to be fixed by a well contact and hence no pass gate leak occurs. This has the result that the transistor surely holds information on cell data, if used as a transfer gate in the memory. A full depletion type transistor formed on a silicon layer 31 is used in a logic circuit, resulting in that it can operate at a low voltage, since elements are isolated from each other, thus allowing Vt to be set lower than the partial depletion type transistor. For manufacturing the semiconductor device thereof, the silicon layer 32 is thicker than the silicon layer 31 to provide the advantage that the well contacts are easily taken for transistors formed on the silicon layer 32. |
