| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor memory in which reduction of a static noise margin accompanying voltage drop of power source voltage can be suppressed and the degree of integration of a circuit can be improved, and its method of reading stored data. SOLUTION: Matrix cells MC11-MCmk are four transistors type SRAM cells in which a load transistor of an inverter in a storage circuit is omitted. In a holding period of stored data, each pair of bit line (bj, bjB) is made pull-up to power source voltage by a bit line voltage control section 4, but a static noise margin at read-out is improved by boosting this pull-up voltage to higher voltage than power source voltage in reading stored data. The degree of integration of a circuit in a CAM can be improved by applying this four transistors type SRAM to a CAM. |
