| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device to prevent lowering of output efficiency by total reflection at a boundary between the topmost layer of a semiconductor multilayer film and the upper layer (transparent resin, etc.), and improve the output efficiency. SOLUTION: A BPSG film having an index of refraction of 2.0 or more is formed on a semiconductor multilayer film containing a light emitting layer. Since the index of refraction of the BPSG film is high as 2.0 or more, the critical angle of total reflection at a boundary between the topmost layer of the semiconductor multilayer film and the BPSG film is increased. As a result, more light can pass without total reflection at the boundary. |
