发明名称 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
摘要 <p>PROBLEM TO BE SOLVED: To provide a semiconductor device dispensing with the removal of a natural oxide film formed on the surface of an electrode pad for input and output as well as any special process for removing a current film while being big in a contacting area between the electrode pad and a barrier metal and capable of stably forming a bump electrode. SOLUTION: In the semiconductor device constituted of the electrode pad 3 formed on a semiconductor substrate 1 through an insulation film 2, a surface protection film 5 formed on the electrode pad 3 and opened so as to cover the peripheral part of the electrode pad 3 and a gold bump electrode 9 formed on the electrode pad 3 through the barrier metal 4, the barrier metal 4 is adhered to and formed on the whole surface of the electrode pad 3 and the barrier metal 4 is interposed between the electrode pad 3 and the surface protection film 5.</p>
申请公布号 JP2003124246(A) 申请公布日期 2003.04.25
申请号 JP20010315710 申请日期 2001.10.12
申请人 SHARP CORP 发明人 SUZUKI YOSHIHIDE
分类号 H01L21/60;(IPC1-7):H01L21/60 主分类号 H01L21/60
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