| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide the inspection technology of a semiconductor device, which can inspect a semiconductor device by a wafer in a process where inspection is impossible in a conventional technology, can precisely and immediate grasp a problem and can speedily perform countermeasure processing on a manufacturing process. SOLUTION: The wafer in the process is irradiated with electronic beams a plurality of times at prescribed intervals with a condition that junction becomes reveres bias. The relax time characteristics of the reverse bias charged potential of pn junction is evaluated by monitoring a secondary electronic signal. Since the charged potential is relaxed in accordance with the size of a reverse bias current within intermittent time, the pn junction can specify the reverse bias current from the luminance signal of a potential contrast image. Thus, a designated region can automatically be inspected by sequentially repeating an operation for performing the inspection method and storing the luminance signal. Information on a picture in a wafer face and brightness distribution are automatically preserved and outputted after inspection.</p> |
