| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device having few shape failures in a patterned wiring layer even if the device has the wiring layer which needs to be patterned for long etching time, and to provide the manufacturing method. SOLUTION: An insulating film is patterned and an auxiliary mask 15a is formed by performing dry etching by using fluorine gas with photoresist 17a as a mask. Then, the wiring layer 13 is patterned and wiring 13a is formed by performing dry etching by using chlorine gas with the auxiliary mask 15a and remaining photoresist 17a as the mask. In second etching, the auxiliary mask 15a is hardly etched. Consequently, the wiring layer 13 thicker than the conventional one can be patterned even if the thickness of photoresist 17a is similar to the conventional one.
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