GATE OXIDE FILM, ELEMENT, AND METHOD AND MATERIAL FOR FORMING GATE OXIDE FILM

摘要

PROBLEM TO BE SOLVED: To provide a gate oxide film hardly causing a leak of a charge and having a high dielectric constant and to provide, in its turn, an element having this gate oxide film. SOLUTION: The gate oxide film is constituted by using one or two or more chemical elements selected from the group consisting of Zr, Hf and Ln and by using Si, O and N.