| 摘要 |
PROBLEM TO BE SOLVED: To obtain a high luminance, low working voltage surface emitting semiconductor laser having a structure of high degree of freedom which can be fabricated by a simple method without limiting the device structure, e.g. the shape of an electrode, or the device characteristics, e.g. the resistance of an element. SOLUTION: The surface emitting semiconductor laser comprises an active layer region 14, and a pair of mirrors including at least one multilayer film semiconductor mirror 13, 15 constituting a vertical resonator together with the active layer region 14. The peripheral part 20 of the optical axis of the multilayer film semiconductor mirror 15 is introduced with dopant at a higher density as compared with the central part 21 of the optical axis. Consequently, reflectivity of the multilayer film semiconductor mirror 15 is high at the central part 21 of emission and low at the peripheral part 20 of emission. Carrier concentration of the multilayer film semiconductor mirror 15 is low at the central part 21 of emission and high at the peripheral part 20 of emission.
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