METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To improve resistance to dielectric breakdown that occurs between wirings which are mainly constituted of conductor layers made of copper. SOLUTION: An embedded second layer wire L2 is provided with a main conductive film 17a comprising copper as a main component. The upper layer of an insulating film 11b is slightly removed by etching in a reduction plasma processing, so that the portion above the wire L2 where electric fields are concentrated is distanced from the surrounding polished surface of the insulating film 11b.