| 发明名称 |
FERROELECTRIC THIN FILM AND METHOD OF FORMING THE SAME |
| 摘要 |
PROBLEM TO BE SOLVED: To reduce the leakage current generated when applying a voltage to a ferroelectric thin film having a composition of Bi4-x Lax Ti3 O12 (0<=x<=2). SOLUTION: To the ferroelectric thin film 4 having a composition of Bi4-x Lax Ti3 O12 (0<=x<=2), Zr is added at an atomic ratio of Zr to Ti (=Zr/Ti) ranging between 0.0005 and 0.05.
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| 申请公布号 |
JP2003124444(A) |
申请公布日期 |
2003.04.25 |
| 申请号 |
JP20010314892 |
申请日期 |
2001.10.12 |
| 申请人 |
MATSUSHITA ELECTRIC IND CO LTD |
发明人 |
YOSHIKAWA TAKAFUMI;TANAKA KEISUKE;AZUMA MASAMICHI |
| 分类号 |
H01L21/316;H01B3/12;H01L21/8246;H01L27/105;(IPC1-7):H01L27/105 |
主分类号 |
H01L21/316 |
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