SEMICONDUCTOR ELEMENT, EPITAXIAL SUBSTRATE, METHOD OF MANUFACTURING SEMICONDUCTOR ELEMENT, AND METHOD OF MANUFACTURING EPITAXIAL SUBSTRATE

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor element that is improved in crystal quality by the reducing dislocation density and to provide an epitaxial substrate used for the element. SOLUTION: On a base material 11 composed of a single-crystal material, a foundation layer 12 composed of an Al-containing III nitride is formed. Then a mask 14 is formed on the foundation layer 12 in a pattern-like form and an initial epitaxially-grown layer 16 having facets 15 and composed of a III nitride is formed through the mask 14. Thereafter, an intermediate layer 13 having the facets 15 is formed by again epitaxially growing the III nitride so that the nitride may bury the initial epitaxially grown layer 16 and may have a flat surface.