发明名称 LAMINATION TYPE ELECTRON SOURCE AND ITS MANUFACTURING METHOD
摘要 <p>PROBLEM TO BE SOLVED: To provide a lamination type electron source that can easily form a large area and its manufacturing method. SOLUTION: In the lamination type electron source 10, an insulation layer 14 is formed on the top of the lower electrode 12 and an upper electrode 16 is formed on top of the insulation layer 14. The upper electrode 16 is formed in lattice shape and the opening part 20 of the lattice is formed so as to expose the insulation layer 14. The cross section of the opening part 20 is formed with the side length D2 larger than the side length D1 and the wall 20c that forms the opening part 20 is formed in slanted face. The thickness T1 of the upper electrode 16 is formed at more than 50 nm deep. Electrons are efficiently emitted from the position of the thickness T2 of the wall 20c of the opening part 20 of the upper electrode 16.</p>
申请公布号 JP2003123624(A) 申请公布日期 2003.04.25
申请号 JP20010322537 申请日期 2001.10.19
申请人 NIPPON HOSO KYOKAI <NHK> 发明人 YAMAMOTO TOSHIHIRO;SEKI MASAHIKO;ATOZAWA MIZUYOSHI;UEDA TOMOSHI;TAKEI TATSUYA;HAGIWARA HIROSHI
分类号 H01J9/02;H01J1/304;H01J1/312;(IPC1-7):H01J1/304 主分类号 H01J9/02
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