发明名称 SEMICONDUCTOR POWER MODULE AND MANUFACTURING METHOD THEREFOR
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor power module and a manufacturing method therefor in which heat radiation is improved, costs are reduced and electric insulation characteristics are satisfactory. SOLUTION: In the semiconductor power module, a lead frame 4 comprising a wiring pattern and an external terminal is fixed through an adhesive resin layer 3 onto an insulating resin layer 2. Besides, a metal insulating board, the adhesive resin layer 3 and the lead frame 4 previously packaging an element 6 are laminated and molded with resins while being pressurized and heated in such a state that the lead frame can be fixed through the adhesive resin layer 3 onto the insulating resin layer 2 in resin-molding. Further, the metal insulating board of a large area is manufactured by forming the adhesive resin layer 3 on the metal insulating board beforehand, and a punching process for an adhesive sheet in forming the adhesive resin layer 3 is not required.
申请公布号 JP2003124400(A) 申请公布日期 2003.04.25
申请号 JP20010312641 申请日期 2001.10.10
申请人 FUJI ELECTRIC CO LTD 发明人 UCHIDA SHINJI;OKAMOTO KENJI;YONEZAWA EIICHI
分类号 H01L23/28;H01L21/56;H01L23/50;H01L25/07;H01L25/18;(IPC1-7):H01L23/28 主分类号 H01L23/28
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