| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor element capable of suppressing irregularity in a reverse current. SOLUTION: A diode 1 has a semiconductor substrate 2, a n<-> -type semiconductor layer 3 and a p<+> -type semiconductor region 4. The substrate 2 is constituted of an n<+> -type silicon single crystal substrate in which orientation of the upper surface is (100). The layer 3 is formed by an epitaxially growing method on the substrate 2, comprising an n<-> -type semiconductor layer of orientation (100). The layer 3 is formed in 30μm or more. The region 4 is formed on the predetermined region of the layer 3.
|
