发明名称 METHOD FOR MANUFACTURING SILICON WAFER AND SILICON WAFER
摘要 PROBLEM TO BE SOLVED: To obtain a method for manufacturing a silicon wafer and a silicon wafer in which the temperature of RTA treatment can be lowered or the treatment time thereof can be shortened by enhancing the hole injection efficiency. SOLUTION: The method for manufacturing a silicon wafer comprises a step S5 for heat-treating a silicon wafer in atmospheric gas to form new holes internally wherein the surface roughness Ra of the silicon wafer is set at 0.1μm or above prior to the heat treatment process.
申请公布号 JP2003124220(A) 申请公布日期 2003.04.25
申请号 JP20010313137 申请日期 2001.10.10
申请人 SUMITOMO MITSUBISHI SILICON CORP 发明人 HASEGAWA TAKESHI;ITO WATARU;SHIRAKI HIROYUKI;NAKADA YOSHINOBU
分类号 H01L21/322;H01L21/26;H01L21/304;(IPC1-7):H01L21/322 主分类号 H01L21/322
代理机构 代理人
主权项
地址