发明名称 |
METHOD FOR MANUFACTURING SILICON WAFER AND SILICON WAFER |
摘要 |
PROBLEM TO BE SOLVED: To obtain a method for manufacturing a silicon wafer and a silicon wafer in which the temperature of RTA treatment can be lowered or the treatment time thereof can be shortened by enhancing the hole injection efficiency. SOLUTION: The method for manufacturing a silicon wafer comprises a step S5 for heat-treating a silicon wafer in atmospheric gas to form new holes internally wherein the surface roughness Ra of the silicon wafer is set at 0.1μm or above prior to the heat treatment process.
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申请公布号 |
JP2003124220(A) |
申请公布日期 |
2003.04.25 |
申请号 |
JP20010313137 |
申请日期 |
2001.10.10 |
申请人 |
SUMITOMO MITSUBISHI SILICON CORP |
发明人 |
HASEGAWA TAKESHI;ITO WATARU;SHIRAKI HIROYUKI;NAKADA YOSHINOBU |
分类号 |
H01L21/322;H01L21/26;H01L21/304;(IPC1-7):H01L21/322 |
主分类号 |
H01L21/322 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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