| 摘要 |
PROBLEM TO BE SOLVED: To solve the problem that a solving means to improve ON resistance caused by the take-out resistance of a source electrode for a mostly affected MOSFET chip can not be found since the take-out of the electrode on the upper surface of the MOSFET chip depends on a wire bonding. SOLUTION: Low ON-resistance is obtained by excluding the leading-around of common drain electrodes and fixing a source electrode directly to a conductive passage through a protective circuit device employing the MOSFET chip, made by integrating a plurality of conductive passages separated electrically and two pieces of power MOSFETs, in which a gate electrode and the source electrode are fixed on a desired conductive passage into one chip, a conductive material provided on the common drain electrode of the MOSFET chip and an insulating resin for covering the MOSFET chip and supporting the conductive passage integrally. |
