REDUCED PRESSURE PLASMA PROCESSOR AND ITS METHOD

摘要

PROBLEM TO BE SOLVED: To provide a reduced pressure plasma processor and its method which can improve throughput, effectively prevent film contamination, and facilitate the management of a film. SOLUTION: A film substrate 2 is carried in a plasma processor main body to a substrate carrying position B from outside and then carried in a chamber 8; plasma processing for removing organic matter from the film substrate by generating plasma by applying high-frequency electric power unit reduced pressure by introducing reaction gas while evacuating the chamber is carried out, the film substrate after the plasma processing is taken out of the chamber and positioned at a substrate carrying-out position C in the plasma processor main body, and carried out of the plasma processor main body.