| 摘要 |
PROBLEM TO BE SOLVED: To provide a simple method for manufacturing the CMOS of a double vertical channel thin film transistor. SOLUTION: The method for manufacturing the CMOS device of the double vertical channel thin film transistor comprises the steps of covering a gate layer 20 formed on a substrate 10 with a first insulating layer 30, and forming a semiconductor layer 40 on the first insulating layer. The method further comprises the steps of selectively masking the layer 40 and doping the layer, thereby forming first and second doping regions 42a, 43b, 44a, and 44b, and first and second channels 46 and an intrinsic region 54. The method also comprises a step of forming second insulating layers on the surfaces of the first, second doping regions, the first and second channels and the intrinsic region. The method also comprises a step of forming metal layers on the surfaces of the exposed first and second doping regions. Since the obtained CMOS has dual gates and offset structures, the channel length can be shortened to an ultrafine level, and hence the effect of an element is remarkably improved.
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