| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for directly measuring trench depth without damaging a wafer. SOLUTION: The focal position of the lens LZ of a microscope is adjusted so that the tip TP of a projecting part PP is clearly viewed. The position A of a sample stand ST in a vertical direction in such a state is confirmed. The sample stand ST is gradually moved to the direction of the lens LZ while the lens LZ is kept in the position as it is. Movement is stopped in a position where the surface SF of the base BP is clearly viewed. The position of the sample stand ST in the vertical direction in such a state in confirmed, and a moving distance MD, namely, the height of the projecting part PP is obtained from a difference between the vertical position B ad the vertical position A. Since standard particles SP are diffused in negative replica NR and it becomes opaque, the focused position of the lens LZ is easily discriminated to be in the tip TP of the projecting part PP or the surface SF of the bas BP. The precise moving distance MD can be obtained.
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