METHOD OF MANUFACTURING GaN SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide the manufacturing method of a GaN semiconductor device in which an etching selection ratio with a base can be enlarged and an electron supply rate is not dropped. SOLUTION: When an n<+> -GaN layer 6 is selectively etched with respect to an n<+> -AlGaN layer 5 in the manufacturing process of the GaN semiconductor device, dry etching is performed with gas plasma whose concentration of gas including Cl atom is set to be 60 to 90% by using gas including the Cl atom and gas including a F atom.