| 摘要 |
PROBLEM TO BE SOLVED: To provide a method by which a III nitride-based compound semiconductor suppressed in threading dislocation can be manufactured. SOLUTION: After a buffer layer 2 and a first III nitride-based compound semiconductor layer 3 are formed in this order on a substrate 1, pits are formed by quickly eroding the lattice defect-containing portions of the semiconductor layer 3. The threading dislocations 102 propagated to the surface of the semiconductor layer 3 form the pits P. Then a second III nitride-based compound semiconductor 4 is epitaxially grown in the longitudinal and transversal directions by using the flat sections of the semiconductor layer 3 as cores. When the semiconductor 4 is grown, little threading dislocations are propagated to the semiconductor 4 from the pits P of the semiconductor layer 3 (Fig. 1c). The semiconductor 4 is formed to a thick film (Fig. 1d) by epitaxially growing the semiconductor 4 for a long time. Thereafter, only the second III nitride-based compound semiconductor 4 is left by removing the buffer layer 2 and first III nitride-based compound semiconductor layer 3 (Fig. 1e).
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