| 摘要 |
PROBLEM TO BE SOLVED: To increase storage density of MRAM. SOLUTION: A magnetic memory cell (10) includes first and second magnetoresistance elements (12, 14) which are connected in series. The first and second magnetoresistance elements (12, 14) are provided with sense layers (18, 24) having different coercive forces (L1, L2). Magnetic Random Access Memory (MRAM) element (812) can include an array of these memory cells (10). |
