| 摘要 |
PROBLEM TO BE SOLVED: To provide a non-volatile semiconductor memory which can accelerate data reading and writing speeds even if the memory is miniaturized, and also to provide a method of driving the same. SOLUTION: A memory cell array of the non-volatile semiconductor memory comprises memory cells 1 arranged in two-dimensional matrices, a plurality of memory word lines 2 which are arranged in rows and are connected to the gates of the memory cells 1, main bit lines 6 arranged in columns, and sub-bit lines 3, and source lines 11. The plurality of sub-bit lines connected to the memory cells 1 in different columns are branched from each main bit line 6, and each source line 11 is commonly connected to the sources of the plurality of memory cells 1 arranged in a column. By this array structure, reading and writing speeds can be maintained even if the device is miniaturized by reading data from the bit line side and writing data by controlling the voltages of the source lines. |
