SEMICONDUCTOR MEMORY AND METHOD FOR DRIVING SENSE AMPLIFIER

摘要

PROBLEM TO BE SOLVED: To improve read-out speed of a sense amplifier in a low power source voltage operation in a semiconductor memory in which a BSG circuit is applied. SOLUTION: This device is provided with: a sense amplifier for reading out memory cell data and amplifying it; a sense amplifier driving means for driving a pull-up source line (CSP) and a pull-down source line (CSN) and sequentially driving the pull-down source line (CSN) into a ground voltage Vss and a boosted ground voltage Vbsg responding to a first control signal (Vss drive signal) and a second control signal (Vbsg drive signal); a sense amplifier driving control means for generating the first control signal (Vss drive signal) and the second control signal (Vbsg drive signal) and setting the ground voltage Vss driving time of the pull-down source line (CSN) by adjusting timing of the first control signal; and a boosted ground voltage generating means for generating the boosted ground voltage (Vbsg).