| 摘要 |
PROBLEM TO BE SOLVED: To suppress a capacitive component between a wiring layer and a ground potential layer and to secure isolation above and under the ground potential layer in re-wiring a semiconductor device. SOLUTION: A first insulating layer 5 is provided between a silicon board 1 as a semiconductor board formed with circuit elements and a first wiring layer 11 of the ground potential layer, an insulating layer 7 is provided between the first wiring layer 11 and a second wiring layer 12, and the distance between diagonals of a hole provided in the form of grid on the ground potential layer is made <=1/8 wavelength. Therefore, isolation can be secured above and under the ground potential layer, and the capacitive component between layers can be suppressed. Thus, the isolation can be secured and a floating capacity can be suppressed without limiting a layout in re-wiring.
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