| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor laser of high output and high reliability. SOLUTION: This semiconductor laser is provided with an active layer 51 formed on a semiconductor substrate 49, a pair of cleaved end surfaces 55 that are formed by cleaving a wafer comprising the active layer 51, and a window layer 50 that is formed on at least one of the cleaved end surfaces 55 and has the band gap energy larger than that of the active layer 51 and the lattice constant smaller than that of the active layer 51.
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