发明名称 |
Resist and etching by-product removing composition and resist removing method using the same |
摘要 |
A resist removing composition having a superior capability for removing a resist, polymer, organometallic polymer and etching by-products such as metal oxide, which does not attack underlying layers exposed to the composition and which does not leave residues after a rinsing step. The resist removing composition contains alkoxy N-hydroxyalkyl alkanamide and a swelling agent.
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申请公布号 |
US2003078174(A1) |
申请公布日期 |
2003.04.24 |
申请号 |
US20020059150 |
申请日期 |
2002.01.31 |
申请人 |
PARK DONG-JIN;KIM KYUNG-DAE;CHON SANG-MUN;HWANG JIN-HO;SOHN IL-HYUN;PARK SANG-OH;JUN PIL-KWON |
发明人 |
PARK DONG-JIN;KIM KYUNG-DAE;CHON SANG-MUN;HWANG JIN-HO;SOHN IL-HYUN;PARK SANG-OH;JUN PIL-KWON |
分类号 |
G03F7/32;C11D1/52;C11D7/26;C11D7/32;C11D7/34;C11D7/50;C11D7/60;C11D11/00;G03F7/42;H01L21/027;H01L21/3065;(IPC1-7):C11D1/00 |
主分类号 |
G03F7/32 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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