| 发明名称 |
SEMICONDUCTOR STRUCTURE WITH IMPROVED SMALLER FORWARD VOLTAGE LOSS AND HIGHER BLOCKING CAPABILITY |
| 摘要 |
A semiconductor device is disclosed. The semiconductor device includes one or more charge control electrodes a plurality of charge control electrodes. The one or more charge control electrodes may control the electric field within the drift region of a semiconductor device. |
| 申请公布号 |
WO03034470(A2) |
申请公布日期 |
2003.04.24 |
| 申请号 |
WO2002US33515 |
申请日期 |
2002.10.16 |
| 申请人 |
FAIRCHILD SEMICONDUCTOR CORPORATION;KOCON, CHRISTOPHER, BOGUSLAW |
发明人 |
KOCON, CHRISTOPHER, BOGUSLAW |
| 分类号 |
H01L21/331;H01L29/06;H01L29/08;H01L29/40;H01L29/417;H01L29/732;H01L29/78;H01L29/861 |
主分类号 |
H01L21/331 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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