| 摘要 |
A circuit for reducing power in SRAMS and DRAMS is implemented by dynamically controlling a voltage applied to individual memory sections of a semiconductor memory array. Individual sections of memory are isolated from a fixed power supply by inserting one or more PFETs between a fixed power supply and a positive connection, VDD, of an individual memory section. The voltage applied to each memory section is controlled by applying a separate variable voltage to each gate of all PFETs connected to a particular memory section. If a memory section is not accessed, the voltage to that section can be lowered, saving power. If a memory section is accessed, the voltage to that section may be raised, providing more power and shortening read and write times.
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