发明名称 Monolithic integrated drive circuit for high-side switch has drive transistor with source connected to ground, and drain formed by substrate of semiconductor body
摘要 An input connection (IN) receives an input signal (IS), and an output connection (OUT) provides an input-signal dependent output signal (OS) for driving the high-side switch (TH). A drive transistor (TA) has a gate (G) connected to the input (IN), a drain (D) formed by the substrate of a semiconductor body, and a source (S) connected to the ground terminal (GND). A drive circuit has supply connections (12,14) for applying a supply potential, an output (18) at which the output signal (OS) is available, and an input (16) which is connected to the drain of the drive transistor. The drive transistor is typically a vertical high-voltage MOSFET. An Independent claim is also included for a load-switching circuit using the drive circuit.
申请公布号 DE10146168(A1) 申请公布日期 2003.04.24
申请号 DE20011046168 申请日期 2001.09.19
申请人 INFINEON TECHNOLOGIES AG 发明人 FELDTKELLER, MARTIN
分类号 H01L27/088;H03K17/06;(IPC1-7):H03K17/06 主分类号 H01L27/088
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