| 摘要 |
A pattern drawing method capable of freely forming a specified exposure pattern when an exposure image reduced less than a mask pattern is formed by the diffraction effect of the opening edge of the mask pattern or by adding a phase shift effect to the diffraction effect, comprising the steps of positioning, opposite to each other, masks 50, 150 having exposure beam transmission areas 54, 154 of a same shape two-dimensionally arranged with a regularity to a substrate at specified intervals, forming a diffraction image on the substrate so that the zero-order diffraction images of the transmission areas 54, 154 are smaller than the transmission areas 54, 154, drawing with the zero-order diffraction images by moving the masks 50, 150 relative to the substrate, focusing the opening of the mask pattern on a small spot formed of the zero-order diffraction image, and drawing, by exposure, the specified pattern on the exposure substrate while moving the spot, whereby the cost of the masks can be reduced by allowing the masks to be applied for general purposes. |
