发明名称 |
Copper post-etch cleaning process |
摘要 |
The invention includes a method of cleaning a surface of a copper-containing material by exposing the surface to an acidic mixture comprising NO3-, F- and one or more organic acid anions having carboxylate groups. The invention also includes a semiconductor processing method of forming an opening to a copper-containing material. A mass is formed over a copper-containing material within an opening in a substrate. The mass contains at least one of an oxide barrier material and a dielectric material. A second opening is etched through the mass into the copper-containing material to form a base surface of the copper-containing material that is at least partially covered by particles comprising at least one of a copper oxide, a silicon oxide or a copper fluoride. The base surface is cleaned with a solution comprising nitric acid, hydrofluoric acid and one or more organic acids to remove at least some of the particles.
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申请公布号 |
US2003077902(A1) |
申请公布日期 |
2003.04.24 |
申请号 |
US20010083035 |
申请日期 |
2001.10.24 |
申请人 |
ANDREAS MICHAEL T.;MORGAN PAUL A. |
发明人 |
ANDREAS MICHAEL T.;MORGAN PAUL A. |
分类号 |
H01L21/02;H01L21/306;H01L21/768;(IPC1-7):H01L21/44 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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