| 摘要 |
<p>A method of forming a multilayer thin film and a device therefor, capable of enhancing the yield of a multilayer thin film product by forming a multilayer thin film on a substrate (W) with the thickness of a thin film in at least a specified layer kept accurate to up to 0.5 nanometer. A reflected X-ray obtained by exposing the surface of a multilayer film being formed on the substrate (W) to an X-ray from an X-ray irradiation means (6) at an angle of 0-1.5 deg. is measured by an X-ray measuring means (7) with an incident angle θ changed to determine a reflectance curve that draws a reflected X-ray intensity with respect to a scattering angle 2θ, a portion, where a scattering angle ranges from 0 deg. to 1 deg., of the reflectance curve is analyzed to thereby calculate the thickness of a thin film being formed, and the thickness of a film being formed is controlled by using the calculation results to form a thin film of a specified thickness.</p> |
