| 摘要 |
<p>A composition for forming an antireflection film used in lithography process of semiconductor device manufacture, comprising a polymer (A) having a weight-average molecular weight of 5000 or less and a polymer (B) having a weight-average molecular weight of 2000 or less. The composition is used to produce an antireflection film for lithography, excellent in step coverage of a step on an irregular surface substrate having a hole or a trench, high in antireflection effect, causing no intermixing with a resist layer, enabling formation of an excellent resist pattern, and having a dry-etching rate higher than that of the resist.</p> |
