| 摘要 |
<p>A method of forming a film structure comprises titanium (204) and/or titanium nitride (208). The Titanium film structure (204) is formed by alternately depositing and then plasma treating thin films of titanium (204). The Titanium nitride structure (208) is formed by alternately depositing and then plasma treating thin films of titanium nitride (208). The titanium films(204) are formed using a plasma reaction of titanium tetrachloride and a hydrogen-containing gas. The titanium nitride films (208) are formed by thermally reacting titanium tetrachloride with a nitrogen-containing gas. The subsequent plasma treatment steps comprise a nitrogen/hydrogen-containing plasma.</p> |
