Semiconductor memory with magnetoresistive memory cells having 2 magnetic layers of hard and soft ferromagnetic materials separated by insulation layer

摘要

The memory has magnetoresistive memory cells (1) positioned at the intersections of perpendicular word and bit lines (8,9), each having 2 magnetic layers (10,11) with different magnetization axes, separated by an insulation layer (12). One magnetic layer is formed of a hard ferromagnetic material and the other is formed of a soft ferromagnetic material, the magnetization axes intersecting in a plane defined by the projections of the bit lines and the word lines. An Independent claim for an operating method for a semiconductor memory is also included.