| 摘要 |
A mask pattern of a phase shift mask for use in photolithography is repaired. First, an imaginary correction pattern is devised according to the pattern of a mask layer that is disposed on the surface of a transparent plate constituting the body of the mask. The surface of the mask body is etched to a predetermined depth according to the imaginary correction pattern, at a location adjacent the mask layer, to thereby form a recess in the mask body. A phase shifter having a predetermined thickness is then formed by depositing phase shifting material in the recess. |
