| 摘要 |
<p>A low temperature method for growing quaternary epitaxial films having the formula XCZN wherein X is a Group IV element and Z is a Group III element. A Gaseous flux of precursor H3XCN and a vapor flux of Z atoms are introduced into a gas-source molecular beam epitaxial (MBE) chamber to form thin film of XCZN on a substrate preferably of silicon or silicon carbide. Silicon substrates may comprise a native oxide layer, thermal oxide layer, A1N/silicon structures or an interface of A1-O-Si-N formed from interlayers of A1 on the Si02 layer. Epitaxial thin film SiCA1N and GeCA1N are provided. Bandgap engineering is disclosed. Semiconductor devices produced by the present method exhibit bandgaps and spectral ranges which make them useful for optoelectronic and microelectronic applications. SiCA1N deposited on large-diameter silicon wafers are substrates for growth of conventional Group III nitrides such as A1N. The quaternary compounds exhibit extreme hardness.</p> |
