发明名称 Circuit for reducing degradation of field effect transistor, has auxiliary transistor arranged in parallel with FET and driven by control signal that reduces degradation of FET
摘要 An auxiliary transistor (D) is arranged in parallel with the field effect transistor (C), and is driven via an auxiliary control signal (d), in a way that reduces the degradation of the field effect transistor. A second field effect transistor (B) may be connected in series with the parallel arrangement of the first field effect transistor and the auxiliary transistor, and driven via a second control signal (b) in cascode connection. Independent claims are also included for a method for reducing the degradation of a field effect transistor, and for the use of the circuit for outputting a low level via the output driver stage.
申请公布号 DE10145462(A1) 申请公布日期 2003.04.24
申请号 DE20011045462 申请日期 2001.09.14
申请人 INFINEON TECHNOLOGIES AG 发明人 PFEFFERL, PETER
分类号 H03K17/0416;H03K17/0814;H03K17/10;(IPC1-7):H03K17/04;H03K17/687 主分类号 H03K17/0416
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