发明名称 |
Manufacturing integrated semiconducting circuit involves implementing short, wide range wiring in same metallization plane, showing each different form on different layer type drawing |
摘要 |
The method involves implementing at least two different wiring forms in the same metallization plane, i.e. short range and wide range wiring, with wide range wiring (1) essentially for signal and supply lines, e.g. over several functional blocks, and short range wiring (2) essentially for individual components within a functional block. Each different wiring form is shown on a different layer type drawing.
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申请公布号 |
DE10151379(C1) |
申请公布日期 |
2003.04.24 |
申请号 |
DE2001151379 |
申请日期 |
2001.10.18 |
申请人 |
INFINEON TECHNOLOGIES AG |
发明人 |
ALTFELD, HELGE;GSCHOEDERER, MONIKA;EISENHUT, MICHAEL;WALTER, MARC;FRANKOWSKY, BEATE |
分类号 |
G06F17/50;H01L23/528;(IPC1-7):H01L21/768;H01L21/66 |
主分类号 |
G06F17/50 |
代理机构 |
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代理人 |
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主权项 |
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